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Analytical and Experimental Validation of Parasitic Components Influence in SiC MOSFET Three-Phase Grid-connected Inverter
Yitao Liu˘Ó, Zhendong Song*, Shan Yin**, Jianchun Peng* and Hui Jiang***
Abstract With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.
Keyword gate driver, modeling, parasitic components, SiC MOSFET, three-phase grid inverter
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