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JPE, Vol. 18, No. 4, July 2018
Implementation and Evaluation of Interleaved Boundary Conduction Mode Boost PFC Converter with Wide Band-Gap Switching Devices
Jinhaeng Jang, Syam Kumar Pidaparthy, and Byungcho Choi
Area Low Power Converters
Abstract The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.
Keyword GaN HEMT,Interleaved boundary conduction mode (BCM) boost PFC converter,Si MOSFET,SiC MOSFET,Wide band-gap switching devices
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