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JPE, Vol. 18, No. 1, January 2018
A SiC MOSFET Based High Efficiency Interleaved Boost Converter for More Electric Aircraft
Haider Zaman, Xiancheng Zheng, Mengxin Yang, Husan Ali, and Xiaohua Wu
Area Low Power Converters
Abstract Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.
Keyword High Power Density (HPD),Interleaved Boost Converter (IBC),More Electrical Aircraft (MEA),Peak Current Mode Control (PCMC),Silicon Carbide (SiC)
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